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Part Number: CMOS Image Sensor

 

 

 

 

Description: The Photo-ASIC based on an active pixel matrix, which is the core of an...


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CMOS Image Sensor General Description


The Photo-ASIC based on an active pixel matrix, which is the core of an imager, is a mixed analog-digital circuit combining all of the following elements on a single chip: Active Pixel Sensor (APS), ADC, logic-control blocks, FIFO, drivers, peripheral interfaces, EEPROM, etc. Such a circuit, integrated in a standard low-voltage CMOS process, is suited for cost-effective imaging applications.
Ultra-low power consumption (typically 5 mW) allows the use of this type of device in battery powered systems.

CMOS Image Sensor datasheet

CMOD2004
PDF/DataSheet Download

  • Datasheet: CMOD2004
  • File Size: 94970 KB
  • Manufacturer: CENTRAL [Central Semiconductor Corp]
  • Click here to Download

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Related Part Number

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    The CENTRAL SEMICONDUCTOR CMOD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode.

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    The CENTRAL SEMICONDUCTOR CMOD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in an ULTRAminiTM surface mount package, designed for high speed switching applications. Marking code is 48.

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    The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a ULTRAminiTM surface mount package, designed for applications requiring high voltage capability. Marking code is ...

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