CMPDM7002A

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.28 A
Gate-Source Breakdown Voltage : 40 V


Specifications

	SYMBOL		UNITS
Drain-Source Voltage	VDS	60	V
Drain-Gate Voltage	VDG	60	V
Gate-Source Voltage	VDS	40	V
Continuous Drain Current	ID	280	mA
Continuous Source Current (Body Diode)	IS	280	mA
Maximum Pulsed Drain Current	IDM	1.5	A
Maximum Pulsed Source Current	ISM	1.5	A
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This special device offers low rDS(ON) and low VDS (ON).