CNY75B

Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%

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CNY75B Picture
SeekIC No. : 0097321 Detail

CNY75B: Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%

floor Price/Ceiling Price

US $ .1~.12 / Piece | Get Latest Price
Part Number:
CNY75B
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.12
  • $.11
  • $.11
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 70 V
Maximum Collector Emitter Saturation Voltage : 0.3 V Isolation Voltage : 5000 Vrms
Current Transfer Ratio : 200 % Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA Maximum Power Dissipation : 200 mW
Maximum Operating Temperature : + 110 C Minimum Operating Temperature : - 55 C
Package / Case : PDIP-6 Packaging : Tube    

Description

Isolation Voltage : 5000 Vrms
Maximum Operating Temperature : + 110 C
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Input Type : DC
Maximum Power Dissipation : 200 mW
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 70 V
Current Transfer Ratio : 200 %


Description

Optocoupler, Phototransistor Output,with Base Connection

he CNY75B consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The features of it are as follows: (1)rated impulse voltage (transient overvoltage): VIOTM = 6 kV peak; (2)isolation test voltage (partial discharge test voltage): Vpd = 1.6 kV; (3)rated isolation voltage (RMS includes DC): VIOWM = 600 VRMS (848 V peak); (4)rated recurring peak voltage (repetitive): VIORM = 600 VRMS; (5)creeping current resistance according to: VDE 0303/IEC 112; (6)comparative Tracking Index: CTI = 275; (7)thickness through insulation . 0.75 mm; (8)further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File No: E 76222; (9)CTR offered in 3 groups.

What comes next is about CNY75B maximum ratings: (1)reverse voltage: 5 V; (2)forward current: 60 mA; (3)forward surge current: 3 A; (4)power dissipation: 100 mW; (5)junction temperature: 125 °C; (6)collector base voltage: 90 V; (7)collector emitter voltage: 90 V; (8)emitter collector voltage: 7 V; (9)collector current: 50 mA; (10)collector peak current: 100 mA; (11)power dissipation: 150 mW; (12)junction temperature: 125 °C.

The following is about CNY75B electrical characteristics: (1)gate-source breakdown voltage: -1.65V max and 1.25V typical at IF = 50 mA; (2)breakdown voltage: 5V min at IR = 100 A; (3)junction capacitance: 50pF typical at VR = 0, f = 1 MHz; (4)collector base breakdown voltage: 90V min at IC = 100 A; (5)collector emitter breakdown voltage: 90V min at IC = 1 mA; (6)emitter collector breakdown voltage: 7V min at IE = 100 A; (7)collector emitter cut-off current: 150nA max at VCE = 20 V, IF = 0. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.






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