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CPH5801

Features: · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time ...

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CPH5801: Features: · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and ...

CPH5801 Data Sheet

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Part Number:
CPH5801
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward oltage.
· Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
4
A
Drain Current (Pulse)
IDP
PW 10ms, duty cycle 1%
5.6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900m50.8mm)
0.9
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +125
m
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
-55 to +125
Storage Temperature
Tstg
-55 to +150



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