CPV363M4F

IGBT SIP MODULE 600V 9A IMS-2

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CPV363M4F Picture
SeekIC No. : 004131072 Detail

CPV363M4F: IGBT SIP MODULE 600V 9A IMS-2

floor Price/Ceiling Price

Part Number:
CPV363M4F
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/20

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Product Details

Quick Details

Processor Series : SCF5249 Series: -
Manufacturer: Vishay Semiconductors IGBT Type: -
Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A Current - Collector (Ic) (Max): 16A
Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
Power - Max: 36W Input: Standard
NTC Thermistor: No Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2    

Description

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Input Capacitance (Cies) @ Vce: 1.1nF @ 30V
Power - Max: 36W
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A
Current - Collector (Ic) (Max): 16A


Features:

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve



Specifications

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
16
8.7
50
50
6.1
50
±20
2500
36
14
V


A



µs
V
VRMS
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV363M4F are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.




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