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Part Number: CY7C1021V33-10VCT

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Description: The CY7C1021V33-10VCT is a type of 64K x 16 static RAM,which is organized as 65,536 words by 16 bits. This device has an ...


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CY7C1021V33-10VCT General Description


The CY7C1021V33-10VCT is a type of 64K x 16 static RAM,which is organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly cuts down power consumption when deselected.Writing to the device is finished by taking chip enable (CE) and write enable (WE) inputs LOW.

Features of the CY7C1021V33-10VCT are:(1)high speed:tAA = 12 ns; (2)CMOS for optimum speed/power; (3)low acti ve power:1320 mW (max.); (4)automatic power-down when deselected; (5)independent Control of Upper and Lowe r bits; (6)available in 44-pin TSOP II and 400-mil SOJ.

The absolute maximum ratings and electrial characteristic of the CY7C1021V33-10VCT can be summarized as:(1):stor age temperature ranges from65°C to +150°C;(2):ambient temperature with power applied is55°C to +125°C;(3):supply voltage on Vcc relative to GND is0.5V to +7.0V;(4):DC voltage applied to outputs in high Z state is0.5V to Vcc+ 0.5V;(5):DC input voltage is0.5V to Vcc + 0.5V;(6):current into outputs (LOW)is 20 mA;(7):static disch arge voltage(per MIL-STD-883, method 3015)is greater than 2001V;(8):latch up current is greater than 200 mA.Elec trial characteristic:(1):output high voltage is 2.4V min when VCC is min andIOH is4.0 mA;(2):output low voltage is 0.4V min when VCC is min and IOL is 8.0 mA;(3):input high voltage is 2.2V min and 6.0V max;(4):output short cuircuit current is-300mA when VCC is max and VOUT is GND.etc.

CY7C1021V33-10VCT Connection Diagram

CY7C1021V33-10VCT  Connection Diagram

CY7C1021V33-10VCT datasheet

CY700SMS
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