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Part Number: CY7C1024AV33
Description: The CY7C1024AV33 is a high-performance CMOS static RAM organized as 131,072 words by 24 bits. Easy mem...


Description: The CY7C1024AV33 is a high-performance CMOS static RAM organized as 131,072 words by 24 bits. Easy mem...
The CY7C1024AV33 is a high-performance CMOS static RAM organized as 131,072 words by 24 bits. Easy memory expansion is provided by an active LOW CE1, CE3, active HIGH CE2, an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE1, CE2, CE3) active and Write Enable (WE) inputs LOW. Data on the 24 I/O pins (I/O0 through I/O23) is then written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip Enable (CE1, CE2, CE3) active and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The 24 input/output pins (I/O0 through I/O23) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE1, CE3 LOW, CE2 HIGH, and WE LOW).
The CY7C1024AV33 is available in a standard 119-ball BGA package and a 100-pin TQFP package.
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied............................................. 55°C to +125°C
Supply Voltage on VCC to Relative GND[2] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ....................................0.5V to VCC + 0.5V
DC Input Voltage[2].................................0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
• High speed
-tAA = 10 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion withCE1, CE2, CE3 and OE options
CY7C1024AV33
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