CY7C1041

The CY7C1041 is a high-performance CMOS static RAM or-ganized as 262,144 words by 16 bits.

Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).

Reading from the device is accomplished by taking Chip En-able (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete descrip- tion of read and write modes.

The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

The CY7C1041 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center pow- er and ground (revolutionary) pinout.