CY7C128A-45DMB

The CY7C128A-45DMB is designed as one kind of high-performance CMOS static RAM device that is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. And features of this device are:(1)High speed is 15 ns;(2)CMOS for optimum speed / power;(3)Low active power is 440 mW (commercial) and 550 mW (military);(4)Low standby power is 220 mW;(5)TTL-compatible inputs and outputs;(6)capable of withstanding greater than 2001V electrostatic discharge.

The absolute maximum ratings of the CY7C128A-45DMB can be summarized as:(1)Storage Temperature: -65°C to +150°C;(2)Ambient Temperature with Power Applied: -55°C to +125°C;(3)Supply Voltage to Ground Potential: -0.5V to +7.0V;(4)DC Voltage Applied to Outputs in High Z State: -0.5V to +7.0V;(5)DC Input Voltage: -3.0V to +7.0V;(6)Output Current into Outputs (LOW): 20 mA;(7)Static Discharge Voltage (per MIL-STD-883, Method 3015): >2001V;(8)Latch-Up Current: >200 mA. If you want to know more information such as the electrical characteristics about the CY7C128A-45DMB, please download the datasheet in www.seekic.com or www.chinaicmart.com.