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Part Number: CY7C1350F

 

 

 

 

Description: The CY7C1350F is a 3.3V, 128K x 36 synchronous-pipelinedBurst SRAM designed specifically to support un...


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CY7C1350F General Description


The CY7C1350F is a 3.3V, 128K x 36 synchronous-pipelinedBurst SRAM designed specifically to support unlimited trueback-to-back Read/Write oper
ations without the insertion ofwait states. The CY7C1350F is equipped with the advancedNo Bus Latency™ (NoBL™) logic required to enable consec-
utive Read/Write operations with data being transferred onevery clock cycle. This feature dramatically improves thethroughput of the SRAM, especi
ally in systems that requirefrequent Write/Read transitions.

All synchronous inputs pass through input registers controlledby the rising edge of the clock. All data outputs pass throughoutput registers controlled by the rising edge of the clock. Theclock input is qualified by the Clock Enable (CEN) signal,which, when deasserted, suspends operation and extends theprevious clock cycle. Maximum access delay from the clockrise is 2.8 ns (200-MHz device)

Write operations are controlled by the four Byte Write Select(BW[A:D]) and a Write Enable (WE) input. All writes areconducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and anasynchronous Output Enable (OE) provide for easy bankselection and output three-state control. In order to avoid buscontention, the output drivers are synchronously three-statedduring the data portion of a write sequence.

CY7C1350F Maximum Ratings

(Above which the useful life may be impaired. For user guide-lines, not tested.)
Storage Temperature ..............................................................−65°C to +150°C
Ambient Temperature with
Power Applied...........................................................................−55°C to +125°C
Supply Voltage on VDD Relative to GND........................................−0.5V to +4.6V
DC Voltage Applied to Outputs
in Three-State....................................................................−0.5V to VDDQ + 0.5V
DC Input Voltage..................................................................−0.5V to VDD + 0.5V
Current into Outputs (LOW)........................................................................20 mA
Static Discharge Voltage....................................................................... ...>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................................................... >200 mA

CY7C1350F Features

•Pin compatible and functionally equivalent to ZBT™ devices
•Internally self-timed output buffer control to eliminate the need to use OE
•Byte Write capability
•128K x 36 common I/O architecture
•Single 3.3V power supply
•2.5V/3.3V I/O Operation
•Fast clock-to-output times
     -2.6 ns (for 250-MHz device)
     -2.6 ns (for 225-MHz device)
     -2.8 ns (for 200-MHz device)
     -3.5 ns (for 166-MHz device)
     -4.0 ns (for 133-MHz device)
     -4.5 ns (for 100-MHz device)
•Clock Enable (CEN) pin to suspend operation
•Synchronous self-timed writes
•Asynchronous output enable (OE)
•JEDEC-standard 100 TQFP and 119 BGA packages
•Burst Capability-linear or interleaved burst order
•"ZZ" Sleep mode option

CY7C1350F Connection Diagram

CY7C1350F  Connection Diagram

CY7C1350F datasheet

CY7C1350F
PDF/DataSheet Download

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