Features: • High speed -20 ns• CMOS for optimum speed/power• Low active power -743 mW• Low standby Power -220 mW• TTL-compatible inputs and outputs• Easy memory expansion with CE1, CE2 andOE features• Automatic power-down when deselectedPinoutSpecification...
CY7C185A: Features: • High speed -20 ns• CMOS for optimum speed/power• Low active power -743 mW• Low standby Power -220 mW• TTL-compatible inputs and outputs• Easy memory e...
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The CY7C185A is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and three-state drivers. The CY7C185 has an automatic power-down feature (CE1), reducing the power consumption by over 70% when deselected. The CY7C185A is in the standard 300-mil-wide DIP package and leadless chip carrier.
Writing to the device is accomplished when the Chip Enable one (CE1) and Write Enable (WE) inputs are both LOW, and the Chip Enable two (CE2) input is HIGH.
Data on the eight I/O pins (I/O0 through I/O7) of CY7C185 is written into the memory location specified on the address pins (A0 through A12).
Reading the CY7C185 is accomplished by taking Chip Enable one (CE1) and Output Enable (OE) LOW, while taking Write Enable (WE) and Chip Enable two (CE2) HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the I/O pins.
The I/O pins of CY7C185 remain in a high-impedance state when Chip Enable one (CE1) or Output Enable (OE) is HIGH, or Write Enable (WE) or Chip Enable two (CE2) is LOW.
A die coat is used to ensure alpha immunity.