CY7C185D

Features: • Pin- and function-compatible with CY7C185• High speed- tAA = 10 ns• Low active power- ICC = 60 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• CMOS for optimum speed/power• Data Retention at 2.0V• Easy memory expansion with CE1, CE2, andOE fea...

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CY7C185D Picture
SeekIC No. : 004320239 Detail

CY7C185D: Features: • Pin- and function-compatible with CY7C185• High speed- tAA = 10 ns• Low active power- ICC = 60 mA @ 10 ns• Low CMOS standby power- ISB2 = 3 mA• CMOS for opt...

floor Price/Ceiling Price

Part Number:
CY7C185D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Pin- and function-compatible with CY7C185
• High speed
- tAA = 10 ns
• Low active power
- ICC = 60 mA @ 10 ns
• Low CMOS standby power
- ISB2 = 3 mA
• CMOS for optimum speed/power
• Data Retention at 2.0V
• Easy memory expansion with CE1, CE2, and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• Available in Lead (Pb)-Free Packages



Specifications

(Above which the useful life may be impaired. For user guidelines,not tested.)
Storage Temperature .................................65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential ................ 0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[2] ................................... −0.5V to VCC + 0.5V
DC Input Voltage[2]................................. −0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................... 20 mA
Static Discharge Voltage............................................. > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current....................................................... > 200 mA



Description

The CY7C185D is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The  CY7C185D has an automatic power-down feature (CE1 or CE2), reducing the power consumption when deselected.

An active LOW write enable signal (WE) of CY7C185D controls the writing/reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A12). Reading the device is accomplished by selecting the CY7C185Dand enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.

The input/output pins of CY7C185D remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.The CY7C185D is in a standard 28-pin 300-mil-wide DIP, SOJ, or SOIC Pb-Free package.




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