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CY7C197B

Features: • Fast access time: 12 ns and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTL-compatible Inputs and Outputs• Available in 24 DIP and 24 SOJPinoutSpecifications Parameter Description Value Unit TSTG...

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SeekIC No. : 004320258 Detail

CY7C197B: Features: • Fast access time: 12 ns and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTL-compatible Inputs and Outputs• Available...

CY7C197B Data Sheet

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Part Number:
CY7C197B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast access time: 12 ns and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL-compatible Inputs and Outputs
• Available in 24 DIP and 24 SOJ


Pinout

Connection Diagram


Specifications

Parameter
Description
Value
Unit
TSTG
 Storage Temperature
65 to +150
°C
TAMB
 Ambient Temperature with Power Applied (i.e.case temperature)
55 to +125
°C
VCC
 Core Supply Voltage Relative to VSS
0.5 to +7.0
V
VIN,VOUT
 DC Voltage Applied to any Pin Relative to VSS
0.5 to VCC + 0.5
V
IOUT
 Output Short-Circuit Current
20
mA
VESD
 Static Discharge Voltage (per MIL-STD-883, Method 3015)
> 2001
V
ILU
 Latch-up Current
> 200
mA



Description

The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The CY7C197B
See the Truth Table in this data sheet for a complete description of read and write modes.

The CY7C197B is available in 24 DIP and 24 SOJ package(s).




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