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Part Number: CY7C197B
Description: The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an ...


Description: The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an ...
The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.
See the Truth Table in this data sheet for a complete description of read and write modes.
The CY7C197B is available in 24 DIP and 24 SOJ package(s).
|
Parameter |
Description |
Value |
Unit |
|
TSTG |
Storage Temperature |
65 to +150 |
°C |
|
TAMB |
Ambient Temperature with Power Applied (i.e.case temperature) |
55 to +125 |
°C |
|
VCC |
Core Supply Voltage Relative to VSS |
0.5 to +7.0 |
V |
|
VIN,VOUT |
DC Voltage Applied to any Pin Relative to VSS |
0.5 to VCC + 0.5 |
V |
|
IOUT |
Output Short-Circuit Current |
20 |
mA |
|
VESD |
Static Discharge Voltage (per MIL-STD-883, Method 3015) |
> 2001 |
V |
|
ILU |
Latch-up Current |
> 200 |
mA |
CY7C197B-12VC
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