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Part Number: CY7C197B

 

 

 

 

Description: The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an ...


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CY7C197B General Description


The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.

See the Truth Table in this data sheet for a complete description of read and write modes.

The CY7C197B is available in 24 DIP and 24 SOJ package(s).

CY7C197B Maximum Ratings

Parameter
Description
Value
Unit
TSTG
Storage Temperature
65 to +150
°C
TAMB
Ambient Temperature with Power Applied (i.e.case temperature)
55 to +125
°C
VCC
Core Supply Voltage Relative to VSS
0.5 to +7.0
V
VIN,VOUT
DC Voltage Applied to any Pin Relative to VSS
0.5 to VCC + 0.5
V
IOUT
Output Short-Circuit Current
20
mA
VESD
Static Discharge Voltage (per MIL-STD-883, Method 3015)
> 2001
V
ILU
Latch-up Current
> 200
mA

CY7C197B Features

• Fast access time: 12 ns and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL-compatible Inputs and Outputs
• Available in 24 DIP and 24 SOJ

CY7C197B Connection Diagram

CY7C197B  Connection Diagram

CY7C197B datasheet

CY7C197B-12VC
PDF/DataSheet Download

  • Datasheet: CY7C197B-12VC
  • File Size: 94051 KB
  • Manufacturer: CYPRESS [Cypress Semiconductor]
  • Click here to Download

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