Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTLcompatible Inputs and Outputs• Available in 28 DIP, 28 SOJ, and 28 TSOP I.• 2.0V Data Retention• Low CMOS standby ...
CY7C199CL-15VC: Features: • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)• CMOS for optimum speed/power• TTLcompatible Inputs and Outputs...
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Parameter | Description | Value | Unit |
TSTG | Storage Temperature | 65 to +150 | °C |
TAMB | Ambient Temperature with Power Applied (i.e. case temperature | 55 to +125 | °C |
VCC | Core Supply Voltage Relative to VSS | 0.5 to +7.0 | V |
VIN,IOUT | DC Voltage Applied to any Pin Relative to VSS | 0.5 to VCC + 0.5 | V |
IOUT | Output Short-Circuit Current | 20 | mA |
VESD | Static Discharge Voltage (per MIL-STD-883, Method 3015) | > 2001 | V |
ILU | Latch-up Current | > 200 | mA |
The CY7C199C is a highperformance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. The CY7C199C features an automatic powerdown feature that significantly reduces power consumption when deselected.
See the Truth Table in this datasheet for a complete description of read and write modes.
The CY7C199C is available in 28 DIP, 28 SOJ, and 28 TSOP I package(s).