D1002

Supply Voltage (Vd)                            +10.0 VDC
Supply Current (Id)                             150 mA
Gate Bias Voltage (Vg)                        +0.3 VDC
Input Power (Pin)                                +18 dBm
Storage Temperature (Tstg)               -65 to +165
Operating Temperature (Ta)               -55 to MTTF Table²
Channel Temperature (Tch)                 MTTF Table²

(2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

Mimix Broadband's D1002 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband's D1002 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. D1002 is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.