Features: 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES Colle...
DIM1200FSM17-A000: Features: 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTraction Dr...
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Features: ` Trench Gate Field Stop Technology` Low Conduction Losses` Low Switching Losses` 10s Sh...
Features: 10µs Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through Silic...
|
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
|
VCES |
Collector-emitter voltage |
VGE = 0V |
1700 |
V |
|
VGES |
Gate-emitter voltage |
- |
±20 |
V |
|
IC |
Continuous collector current |
Tcase = 75 |
1200 |
A |
|
IC(PK) |
Peak collector current |
1ms, Tcase = 105 |
2400 |
A |
|
Pmax |
Max. transistor power dissipation |
Tcase = 25, T j = 150 |
10.4 |
kW |
|
I2t |
Diode I2t value |
VR = 0, tp = 10ms, Tvj = 125 |
480 |
kA2s |
|
Viso |
Isolationvoltage-per module |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |
|
QPD |
Partialdischarge-permodule |
IEC1287.V1=1500V,V2=1100V,50Hz RMS |
10 |
pC |