Features: ` Fast access time: 45/55/70ns` Low power consumption: Operating current: 23/20/18mA (TYP.) Standby current: -L/-LL version 10/1A (TYP.)` Single 2.7V ~ 3.6V power supply` All inputs and outputs TTL compatible` Fully static operation` Tri-state output` Data byte control : LB# (DQ0 ...
EM6164K600V: Features: ` Fast access time: 45/55/70ns` Low power consumption: Operating current: 23/20/18mA (TYP.) Standby current: -L/-LL version 10/1A (TYP.)` Single 2.7V ~ 3.6V power supply` All inputs an...
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Features: ` Fast access time: 45/55/70ns` Low power consumption: Operating current: 40/30/20mA (...

| PARAMETER | SYMBOL | RATING | UNIT |
| Terminal Voltage with Respect to Vss | VTERM | -0.5 to 4.6 | V |
| Operating Temperature | TA | 0 to 70(C grade) | °C |
| -20 to 80(E grade) | |||
| -40 to 85(I grade) | |||
| Storage Temperature | TSTG | -65 to 150 | °C |
| Power Dissipation PD |
PD | 1 | W |
| DC Output Current | IOUT | 50 | mA |
| Soldering Temperature (under 10 sec) | TSOLDER | 260 | °C |
The EM6164K600V is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
The EM6164K600V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
The EM6164K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible