EPCS1SI8N

The EPCS1SI8N is with SRAM-based devices such as Cyclone FPGAs, configuration data must be reloaded each time the system initializes, or when a new configuration is needed. Serial configuration devices cannot be cascaded. See AN 250: Configuring Cyclone FPGAs for more information regarding the Cyclone FPGA decompression feature in AS mode. Serial configuration devices are flash memory devices with a serial interface that can store configuration data for a Cyclone device and reload the data to the device upon power-up or reconfiguration. Table 1 lists the serial configuration devices. With the new data-decompression feature in the Cyclone FPGA family, designers can use smaller serial configuration devices to configure larger Cyclone FPGAs. The serial configuration devices are designed to configure Cyclone FPGAs and cannot configure other existing device families. Figure 2 shows the serial configuration device block diagram.

The features of EPCS1SI8N can be summarized as (1)1- and 4-Mbit flash memory devices that serially configure cyclone TM FPGAs; (2)easy-to-use four-pin interface; (3)low cost, low pin count and non-volatile memory; (4)low current during configuration and near-zero standby mode current; (5)3.3-V operation; (6)available in 8-pin small outline integrated circuit (SOIC) package; (7)enables the Nios processor to access unused flash memory through active serial (AS) memory interface; (8)re-programmable memory with more than 100,000 erase/program cycles; (9)programming support with ByteBlaster TM II download cable; (10)additional programming support with the Altera Programming Unit (APU) and programming hardware from BP Microsystems, System General, and other vendors; (11)software design support with the altera quartus II development system for windows-based PCs as well as Sun SPARC station and HP 9000 Series 700/800; (12)delivered with the memory array erased (all the bits set to 1).

The absolute maximum ratings of EPCS1SI8N are (1)VCC supply voltage @with respect to ground: -0.6 to 4.0 V; (2)VI DC input voltage @with respect to ground: -0.6 to 4.0 V; (3)IMAX DC VCC or GND current: 15mA; (4)IOUT DC output current per pin: -25 to 25mA; (5)PD power dissipation: 54mW; (6)TSTG storage temperature no bias: -65 to 150°C; (7)TAMB ambient temperature under bias: -65 to 135°C; (8)TJ junction temperature under bias: 135 °C.