FCA20N60_F109, US $ 2.06-2.83 , Fairchild Semiconductor, FCA20N60_F109 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00159018 Detail

FCA20N60_F109: MOSFET 600V N-CH MOSFET

FCA20N60_F109 Data Sheet

US $ 2.06~2.83 / Piece | Get Latest Price

Part Number:: FCA20N60_F109
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/28

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Recent History
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MOSFET N-CH 600V 20A TO-3PN

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.19 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3PN	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Package / Case : TO-3PN

Parameters:

Technical/Catalog Information	FCA20N60_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	190 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	3080pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	98nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCA20N60_F109 FCA20N60_F109

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FCA20N60_F109

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