FDB6035AL

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 48 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0125 Ohms at 10 V


Features:

*48 A, 30 V R_DS(ON) =  12 m @ V_GS = 10 V
                   R_DS(ON) =  14 m @ V_GS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely ow R_DS(ON)
*175 maximum junction temperature rating

 

Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1) Pulsed (Note 1)	48	A
		180
PD	Total Power Dissipation @ TC = 25 Derate above 25	52	W
		0.3	W/
TJ, TSTG	Operating and Storage Junction Temperature Range	-65 to +175

Description

  This FDB6035AL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

  These  MOSFETs FDB6035AL feature faster switching and lower gate charge than other  MOSFETs with comparable RDS(ON) specifications.

  The result is a MOSFET FDB6035AL that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.It has been optimized for low gate charge, low RDS(ON) and fast switching speed.