FDB603AL

MOSFET

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SeekIC No. : 00162763 Detail

FDB603AL: MOSFET

floor Price/Ceiling Price

Part Number:
FDB603AL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.022 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.022 Ohms at 10 V


Features:

*33 A, 30 V. RDS(ON)  = 0.022 @  VGS =10 V                         
                    RDS(ON)  = 0.036 @  VGS =4.5 V.      
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low RDS(ON) .
*175°C maximum junction temperature rating.



Specifications

Symbol Parameter FDP603AL FDB603AL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous 
                      - Pulsed                             (Note 1)
33 A
100
PD Total Power Dissipation @ TC = 25
50 W
Derate above 25 0.33 W/
TJ, TSTG Operating and Storage Temperature Range -65 to 175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275



Description

  These FDB603AL N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  These devices FDB603AL are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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