FDB6644

MOSFET

product image

FDB6644 Picture
SeekIC No. : 00165783 Detail

FDB6644: MOSFET

floor Price/Ceiling Price

Part Number:
FDB6644
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0085 Ohms at 10 V


Features:

·  50 A, 30 V. R DS(ON)=  8.5 mW @ VGS = 10 V
                       R DS(ON)=10.5 mW @ VGS = 4.5 V
·  Low gate charge  (27 nC typical)
·  Fast switching speed
·  High performance trench technology for extremely low R DS(ON)
·  175°C maximum junction temperature rating



Specifications

Symbol
Parameter
FDP6644
FDB6644
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 16
V
ID
 Drain Current - Continuous     (Note 1)
                       - Pulsed            (Note 1)
50
A
150
PD
Total Power  Dissipation @ TC=25         
                    Derate above 25
125
W
83
W/
TJ, Tstg
Operating and Storage Temperature Range
-65 to +175




Description

This FDB6644 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDB6644 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET FDB6644 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. 




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optical Inspection Equipment
Sensors, Transducers
LED Products
Cable Assemblies
Transformers
View more