FDB6644S

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 125 C
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 55 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0085 Ohms at 10 V


Features:

*  28 A, 30 V.  R _DS(ON) = 10 m W @ VGS = 10 V 
                       R _DS(ON) = 12 m W @ V_GS = 4.5 V
*  Includes SyncFET Schottky body diode 
*  Low gate charge (27nC typical)
*  High performance trench technology for extremely low R _DS(ON)  and fast switching
*  High power and current handling capability 


Specifications

Symbol	Parameter	Ratings	Unit
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±16	V
ID	Drain Current - Continuous (Note 1)                    Pulsed (Note 1)	55	A
		150
PD	Power Dissipation (TC = 25)               - Derate above 25	60	W
		0.48	W/
TJ,TSTG	Operating and Storage Temperature Range	-65to+125
TL	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	275

Description

This FDP6644S/FDB6644S MOSFET is designed to replace a single MOSFET  and parallel Schottky diode in synchronous DC:DC  power supplies.  This 30V MOSFET is designed to  maximize power conversion efficiency, providing a low R _DS(ON)  and low gate charge.  The FDP6644S includes  an integrated Schottky diode using Fairchild's  monolithic SyncFET technology.   The performance of  the FDP6644S/FDB6644S as the low-side switch in a  synchronous rectifier is indistinguishable from the  performance of the FDP6644/FDB6644 in parallel with a Schottky diode.