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FDB66N15

Features: * 66A, 150V, RDS(on)= 0.036@VGS= 10 V* Low gate charge ( typical 49 nC)* Low Crss( typical 78.5 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications Symbol Parameter FDH50N50/FDA50N50 Unit VDSS Drain-Source Voltage 150 V ID Drain Curren...

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FDB66N15: Features: * 66A, 150V, RDS(on)= 0.036@VGS= 10 V* Low gate charge ( typical 49 nC)* Low Crss( typical 78.5 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capabilitySpecifications Sym...

FDB66N15 Data Sheet

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Part Number:
FDB66N15
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

* 66A, 150V, RDS(on) = 0.036 @VGS = 10 V
* Low gate charge ( typical 49 nC)
* Low Crss ( typical  78.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol Parameter FDH50N50/FDA50N50 Unit
VDSS Drain-Source Voltage 150 V
ID Drain Current    - Continuous (TC = 25) 
                         - Continuous (TC = 100)		 66
41.8		 A
A
IDM
Drain Current    - Pulsed                       (Note 1)		 264 A
VGSS Gate-Source voltage ±30
 V
EAS
Single Pulsed Avalanche Energy             (Note 2)		 1240 mJ
IAR Avalanche Current                                  (Note 1) 66 A
EAR Repetitive Avalanche Energy                  (Note 1) 35.7 mJ
dv/dt Peak Diode Recovery dv/dt                     (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25) 
                              - Derate above 25		 357
2.86		 W
W/ 
TJ,  TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds		 300   



Description

  These FDB66N15 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDB66N15 are well suited for high effi-cient switched mode power supplies and active power factor correction.




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