FDC604P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 5.5 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.033 Ohms


Features:

5.5 A,  20 V. R_DS(ON) = 0.033 @ V_GS = 4.5 V
                             R_DS(ON) = 0.043 @ V_GS = 2.5 V
                             R_DS(ON) = 0.060@ V_GS = 1.8 V
Fast switching speed.
High performance trench technology for extremelylow R_DS(ON)


Application

Battery management
Load switch
Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  Continuous  (Note 1a)                        Pulsed	-5.5	A
		-20
PD	Maximum Power Dissipation   (Note 1a)                                                (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDC604P P-Channel 1.8V specified MOSFET usesFairchild's low voltage PowerTrench process. It hasbeen optimized for battery power managementapplications.

Parameters:

Technical/Catalog Information	FDC604P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	33 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1926pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC604P FDC604P FDC604PTR ND FDC604PTRND FDC604PTR