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MFG:FSC Package Cooled:SSOT-6


Part Number: FDC6303N
MFG: FSC
Package Cooled: SSOT-6
Description: These dual N-Channel logic level enhancement mode field effect transistors are produced using Fa...
MFG:FSC Package Cooled:SSOT-6


MFG: FSC
Package Cooled: SSOT-6
Description: These dual N-Channel logic level enhancement mode field effect transistors are produced using Fa...
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
|
Symbol |
Parameter |
FDC6304P |
Units |
|
VDSS |
Drain-Source Voltage, Power Supply Voltage |
25 |
V |
|
VGSS |
Gate-Source Voltage, |
8 |
V |
|
ID, IO |
Drain Current - Continuous
- Pulsed
|
0.68 |
A |
|
2 | |||
|
PD |
Maximum Power Dissipation (Note 1a)
(Note1b) |
0.9 |
W |
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Tempature Ranger |
-55 to +150 |
°C |
|
ESD |
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) |
6.0 |
kV |
FDC6303N
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