FDC6304P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : SSOT-6
Drain-Source Breakdown Voltage : - 25 V
Gate-Source Breakdown Voltage : - 8 V
Continuous Drain Current : 0.46 A


Features:

-25 V, -0.46 A continuous, -1.0 A Peak.
        R _DS(ON)= 1.5 W @ V_GS= -2.7 V                      
        R _DS(ON) =1.1 W@ V _GS= -4.5 V
Very low level gate drive requirements allowing  direct operation in 3V circuits. V _GS(th)< 1.5 V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.


Specifications

Symbol	Parameter	FDC6304P	Units
VDSS	Drain-Source Voltage, Power Supply Voltage	-25	V
VGSS	Gate-Source Voltage	-8	V
ID, IO	Drain Current - Continuous                           - Pulsed	-0.46	A
		-1
PD	Maximum Power Dissipation (Note 1a)                                                                    (Note1b)	0.9	W
		0.7
TJ, Tstg	Operating and Storage Tempature Ranger	-55 to +150	°C
ESD	Electrostatic Discharge Rating MIL-STD-883D       Human Body Model (100pf / 1500 Ohm)	6	kV

Description

These P-Channel enhancement mode  field effect transistor FDC6304P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device FDC6304P is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Parameters:

Technical/Catalog Information	FDC6304P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	460mA
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	62pF @ 10V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.5nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6304P FDC6304P FDC6304PTR ND FDC6304PTRND FDC6304PTR