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FDC6305N

MOSFET SSOT-6 N-CH 20V

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SeekIC No. : 00146000 Detail

FDC6305N: MOSFET SSOT-6 N-CH 20V

FDC6305N Data Sheet

floor Price/Ceiling Price

US $ .15~.29 / Piece | Get Latest Price
Part Number:
FDC6305N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.29
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  • $.15
  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SSOT-6
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

• 2.7 A, 20 V.  R DS(ON)= 0.08 Ω @ VGS = 4.5 V
                       R DS(ON)= 0.12 Ω @ VGS = 2.5 V
• Low gate charge (3.5nC typical).
• Fast switching speed.
• High performance trench technology for extremelylow RDS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

• Load switch
• DC/DC converter
• Motor driving




Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
2.7
A
8
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

These FDC6305N N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDC6305N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs80 mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) @ Vds 310pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs5nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6305N
FDC6305N
FDC6305NCT ND
FDC6305NCTND
FDC6305NCT



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