FDC6306P

MOSFET SSOT-6 P-CH -20V

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SeekIC No. : 00148839 Detail

FDC6306P: MOSFET SSOT-6 P-CH -20V

floor Price/Ceiling Price

US $ .16~.28 / Piece | Get Latest Price
Part Number:
FDC6306P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.28
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : 1.9 A


Features:

• -1.9 A, -20 V.  R DS(ON)= 0.170 Ω @ VGS = -4.5 V
                         R DS(ON)= 0.250Ω @ VGS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low  R DS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).



Application

• Load switch
• Battery protection
• Power management



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
-1.9
A
-5
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

These FDC6306P P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC6306P have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationFDC6306P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs170 mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) @ Vds 441pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4.2nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6306P
FDC6306P
FDC6306PTR ND
FDC6306PTRND
FDC6306PTR



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