FDC6306P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.17 Ohms
Continuous Drain Current : 1.9 A


Features:

• -1.9 A, -20 V.  R _DS(ON)= 0.170 Ω @ V_GS = -4.5 V
                         R _DS(ON)= 0.250Ω @ V_GS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low  R _DS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

• Load switch
• Battery protection
• Power management


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous  (Note 1a)                        - Pulsed	-1.9	A
		-5
PD	Power Dissipation for Single Operation (Note 1a)                                                               (Note 1b)                                                               (Note 1c)	0.96	W
		0.9
		0.7
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

These FDC6306P P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC6306P have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Parameters:

Technical/Catalog Information	FDC6306P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.9A
Rds On (Max) @ Id, Vgs	170 mOhm @ 1.9A, 4.5V
Input Capacitance (Ciss) @ Vds	441pF @ 10V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.2nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6306P FDC6306P FDC6306PTR ND FDC6306PTRND FDC6306PTR