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Part Number: FDC6306P

 

 

 

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Description: These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTren...


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FDC6306P General Description


These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC6306P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
-1.9
A
-5
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C

FDC6306P Features

• -1.9 A, -20 V.  R DS(ON)= 0.170 Ω @ VGS = -4.5 V
                         R DS(ON)= 0.250Ω @ VGS = -2.5 V
• Low gate charge (3 nC typical).
• Fast switching speed.
•  High performance trench technology for extremely low  R DS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC6306P Typical Application

• Load switch
• Battery protection
• Power management

FDC6306P datasheet

FDC6306P
PDF/DataSheet Download

  • Datasheet: FDC6306P
  • File Size: 241069 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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