FDC637AN

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 6.2 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V
• Fast switching speed.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).


Application

• DC/DC converter
• Load switch
• Battery Protection


Pinout

Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 ±8 6.2 20 1.6 0.8 -55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

This FDC637AN N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices FDC637AN have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Parameters:

Technical/Catalog Information	FDC637AN
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	24 mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) @ Vds	1125pF @ 10V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC637AN FDC637AN FDC637ANCT ND FDC637ANCTND FDC637ANCT