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MFG:FSC
Part Number: FDC658P
MFG: FSC
Description: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pro...
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FDC658P
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DataSheet
General Description
FDC658P General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDC658P Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-30 ±20 -4 -20 1.6 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
THERMAL CHARACTERISTICS
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
FDC658P Features
·-4 A, -30 V. RDS(ON) = 0.050 W @ VGS = -10 V RDS(ON) = 0.075 W @ VGS = -4.5 V.
·Low gate charge (8nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
·Low gate charge (8nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC658P Connection Diagram
FDC658P
PDF/DataSheet Download
- Datasheet: FDC658P
- File Size: 255433 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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- ·FDC05-12D15
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- ·FDC05-12S05
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- ·FDC05-12S12
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- ·FDC05-12S15
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- ·FDC05-12S33
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