MOSFET SSOT-6 P-CH -30V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 4 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-30 ±20 -4 -20 1.6 0.8 -55 to 150 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
This FDC658P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These FDC658P devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Technical/Catalog Information | FDC658P |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 750pF @ 15V |
Power - Max | 800mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 12nC @ 5V |
Package / Case | SSOT-6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC658P FDC658P |