FDC658P

MOSFET SSOT-6 P-CH -30V

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FDC658P Picture
SeekIC No. : 00159615 Detail

FDC658P: MOSFET SSOT-6 P-CH -30V

floor Price/Ceiling Price

Part Number:
FDC658P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 4 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 4 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

·-4 A, -30 V. RDS(ON) = 0.050 W @ VGS = -10 V RDS(ON) = 0.075 W @ VGS = -4.5 V.
·Low gate charge (8nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
±20
-4
-20
1.6
0.8
-55 to 150
V
V
A

W

°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W



Description

This FDC658P P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These FDC658P devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.




Parameters:

Technical/Catalog InformationFDC658P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs50 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 15V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 5V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC658P
FDC658P



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