FDD14AN06LA0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0146 Ohms


Features:

• rDS(ON) = 12.8mΩ (Typ.), V_GS = 5V, I_D = 50A
• Qg(tot) = 25nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 50 50 9.5 Figure 4 55 125 0.83 -55 to 175	V V A A A A mJ W 0.83W/°C °C
ID	Drain Current Continuous (TC < 100°C, VGS = 10V) Continuous (TC < 80°C, VGS = 5V) Continuous (Tamb = 25°C, VGS = 5V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

1.2 100 52

°C/W °C/W °C/W

Parameters:

Technical/Catalog Information	FDD14AN06LA0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	11.6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	2810pF @ 25V
Power - Max	125W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	32nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD14AN06LA0 FDD14AN06LA0