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FDD16AN08A0

MOSFET 75V 50a .16Ohms/VGS=1V

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SeekIC No. : 00149634 Detail

FDD16AN08A0: MOSFET 75V 50a .16Ohms/VGS=1V

FDD16AN08A0 Data Sheet

floor Price/Ceiling Price

US $ .65~1.01 / Piece | Get Latest Price
Part Number:
FDD16AN08A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.01
  • $.92
  • $.74
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• rDS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 50A
• Qg(tot) = 31nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
75
±20

50
9
Figure 4
95
135
0.9
-55 to 175
V
V

A
A
A
mJ
W
W/°C
°C
ID
 Drain Current
Continuous (TC < 79°C, VGS = 10V)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
 Single Pulse Avalanche Energy (Note 1)
PD
 Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA		 Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11
100
52
 °C/W
°C/W
°C/W



Parameters:

Technical/Catalog InformationFDD16AN08A0
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs16 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 1874pF @ 25V
Power - Max135W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD16AN08A0
FDD16AN08A0
FDD16AN08A0CT ND
FDD16AN08A0CTND
FDD16AN08A0CT



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