FDD2570

MOSFET 150V NCh PowerTrench

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FDD2570 Picture
SeekIC No. : 00160974 Detail

FDD2570: MOSFET 150V NCh PowerTrench

floor Price/Ceiling Price

Part Number:
FDD2570
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : TO-252AA
Continuous Drain Current : 4.7 A


Features:

 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V
                         RDS(ON) = 90 m @ VGS = 6 V
 Low gate charge
 Fast switching speed
High performance trench technology for extremely
    low RDS(ON)
 High power and current handling capability.
 


Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 150 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 1a)
Drain Current Pulsed
4.7 A
30
PD Maximum Power Dissipation @ TC = 25°C (Note 1)
                                            @ TA = 25°C (Note 1a)
                                            @ TA = 25°C (Note 1b)
70 W
3.2
1.3
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD2570 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


These MOSFETs FDD2570 feature faster switching and lower gate charge than other  MOSFETs with comparable RDS(ON) specifications.


The result is a MOSFET FDD2570 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDD2570
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs80 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 1907pF @ 75V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2570
FDD2570



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