FDD2582

MOSFET N-Ch PowerTrench

product image

FDD2582 Picture
SeekIC No. : 00146884 Detail

FDD2582: MOSFET N-Ch PowerTrench

floor Price/Ceiling Price

US $ .56~.91 / Piece | Get Latest Price
Part Number:
FDD2582
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.91
  • $.8
  • $.65
  • $.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.066 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 21 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.066 Ohms


Features:

• rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A
• Qg(tot) = 19nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101





Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System





Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20

21
15
3.7
Figure 4
59
95
0.63
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, VGS = 10V) (Note 1)
Continuous (TC = 25°C, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.58
100
52
°C/W
°C/W
°C/W




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FDD2582 Full Production RoHS Compliant $1.14 TO-252(DPAK) 2 TAPE REEL Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDD2582
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDD2582 is available. Click here for more information .





Description

The FDD2582 is designed as one kind of N-channel powertrench MOSFET that can be used in (1)DC/DC converters and off-line UPS; (2)distributed power architectures and VRMs; (3)Primary Switch for 24V and 48V Systems; (4)high voltage synchronous rectifier; (5)direct injection / diesel injection system; (6)42V Automotive load control; (7)electronic valve train system. Features of the FDD2582 are:(1)rDS(on)=58m (typ.), VG =10V, ID=7A;(2)Qg(tot)=19nC (typ.), VGS=10V;(3)low miller charge;(4)low QRR body diode;(5)UIS capability (single pulse and repetitive pulse);(6)qualified to AEC Q101.

The absolute maximum ratings of the FDD2582 can be summarized as:(1)drain to source voltage:150 V;(2)gate to source voltage:±20 V;(3)drain current continuous (Tc=25, VGS=10V):21 A;(4)single pulse avalanche energy:59 mJ;(5)power dissipation:95 W;(6)operating and storage temperature:-55 to 175 ;(7)thermal resistance junction to case TO-252:1.58 /W;(8)thermal resistance junction to ambient TO-252:100 /W;(9)thermal resistance junction to ambient TO-252, 1in copper pad area:52 /W. If you want to know more information such as the electrical characteristics about the FDD2582, please download the datasheet in www.seekic.com or www.chinaicmart.com .






Parameters:

Technical/Catalog InformationFDD2582
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs66 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1295pF @ 25V
Power - Max95W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2582
FDD2582



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Computers, Office - Components, Accessories
Programmers, Development Systems
Sensors, Transducers
Cable Assemblies
Semiconductor Modules
View more