Position: Home  > All Categories> Integrated Circuits (ICs) > FDD2612

FDD2612

MOSFET 200V NCh PowerTrench

product image

FDD2612 Picture
See larger image
SeekIC No. : 00161371 Detail

FDD2612: MOSFET 200V NCh PowerTrench

FDD2612 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FDD2612
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.9 A
Resistance Drain-Source RDS (on) : 0.72 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 4.9 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.72 Ohms


Features:

 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V
  High performance trench technology for extremely
    low RDS(ON)
  High power and current handling capability
Fast switching speed
Low gate charge (8nC typical)


Application

 DC/DC converter


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 200 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous            (Note 1a)
                       Pulsed		 4.9 A
10
PD Power Dissipation (Note 1)
                            (Note 1a)
                            (Note 1b)		 42 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD2612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low RDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDD2612
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs720 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 234pF @ 100V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD2612
FDD2612



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Circuit Protection
A50QS75-4Y
F-17*77
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Switches
US32DMRJ
HBGQ22P-11ET
View more