FDD3672

MOSFET 100V 44a .28 Ohms/VGS=1V

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SeekIC No. : 00146023 Detail

FDD3672: MOSFET 100V 44a .28 Ohms/VGS=1V

floor Price/Ceiling Price

US $ .61~1 / Piece | Get Latest Price
Part Number:
FDD3672
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1
  • $.89
  • $.71
  • $.61
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 44 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101





Application

• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System





Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
100
±20

44
31
6.5
Figure 4
120
135
0.9
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, VGS = 10V)
Continuous (TC = 100°C, VGS = 10V)
Continuous (Tamb = 25°C, VGS = 10V, RJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.11
100
52
°C/W
°C/W
°C/W




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FDD3672 Full Production RoHS Compliant $1.40 TO-252(DPAK) 2 TAPE REEL Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FDD3672
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDD3672 is available. Click here for more information .





Parameters:

Technical/Catalog InformationFDD3672
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs28 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds 1710pF @ 25V
Power - Max135W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3672
FDD3672
FDD3672CT ND
FDD3672CTND
FDD3672CT



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