FDD3690

MOSFET 100V NCh PowerTrench

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FDD3690 Picture
SeekIC No. : 00152458 Detail

FDD3690: MOSFET 100V NCh PowerTrench

floor Price/Ceiling Price

US $ .29~.33 / Piece | Get Latest Price
Part Number:
FDD3690
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1670
  • 1670~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.33
  • $.31
  • $.31
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.064 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.064 Ohms
Package / Case : TO-252AA


Features:

 22 A, 100 V.  RDS(ON) = 64 m @ VGS = 10 V 
                         RDS(ON) = 71 m @ VGS = 6 V
Low gate charge (28nC typical)
Fast Switching
  High performance trench technology for extremely 
    low RDS(ON) 
  High power and current handling capability



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
ID Continuous Drain Current @TC=25°C  (Note 3
  Pulsed  (Note 1a)
22 A
75
PD Power Dissipation @TC=25°C (Note 3)
                             @TA=25°C (Note 1a)
                             @TA=25°C (Note 1b)
60 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD3690 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional  switching PWM controllers.


These MOSFETs FDD3690 feature faster switching and lower  gate charge than other MOSFETs with comparable RDS(ON) specifications.


The result is a MOSFET FDD3690 that is easy and safer to drive  (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDD3690
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs64 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds 1514pF @ 50V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3690
FDD3690



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