MOSFET 20V N-Ch PowerTrench
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 50 A | ||
| Resistance Drain-Source RDS (on) : | 0.009 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252AA | Packaging : | Reel |
50 A, 20 V RDS(ON) = 9 m @ VGS = 10 V
RDS(ON) = 11 m @ VGS = 4.5 V
RDS(ON) = 16 m @ VGS = 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low RDS(ON)
DC/DC converter
Motor Drives

| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
50 | A |
| 14.7 | |||
| PD |
Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
60 | W |
| 44 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
This FDD3706 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
| Technical/Catalog Information | FDD3706 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 14.7A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 16.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1882pF @ 10V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD3706 FDD3706 |