FDD3706

MOSFET 20V N-Ch PowerTrench

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SeekIC No. : 00153266 Detail

FDD3706: MOSFET 20V N-Ch PowerTrench

floor Price/Ceiling Price

US $ .34~.58 / Piece | Get Latest Price
Part Number:
FDD3706
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.58
  • $.5
  • $.39
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

50 A, 20 V  RDS(ON) =   9 m @ VGS = 10 V          

                 RDS(ON) = 11 m @ VGS = 4.5 V  
                 RDS(ON) = 16 m @ VGS = 2.5 V  

Low gate charge  (16 nC)  

Fast Switching  

High performance trench technology for extremely
   low RDS(ON) 




Application

DC/DC converter

Motor Drives




Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID Continuous Drain Current  @TC=25°C  (Note 3)
                                          @TA=25°C  (Note 1a)
                                              Pulsed      (Note 1a)
50 A
14.7
PD

Power Dissipation   @TC=25°C  (Note 3)

                               @TA=25°C  (Note 1a)

                               @TA=25°C   (Note 1b)

60 W
44
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD3706 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional  switching PWM controllers. It has been optimized for  low gate charge, low RDS( ON) , fast switching speed and  extremely low RDS(ON) in a small package.




Parameters:

Technical/Catalog InformationFDD3706
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C14.7A
Rds On (Max) @ Id, Vgs9 mOhm @ 16.2A, 10V
Input Capacitance (Ciss) @ Vds 1882pF @ 10V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs23nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD3706
FDD3706



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