FDD6030BL

MOSFET 30V N-Ch PowerTrench

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FDD6030BL Picture
SeekIC No. : 00164015 Detail

FDD6030BL: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDD6030BL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 42 A
Resistance Drain-Source RDS (on) : 0.0077 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 42 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0077 Ohms


Features:

·  42 A, 30 V RDS(ON) = 16 mW @ VGS = 10 V RDS(ON) = 22 mW @ VGS = 4.5 V
·  Low gate charge (22 nC typical)
·  Fast switching
·  High performance trench technology for extremely low RDS(ON)



Application

·  DC/DC converter
·  Motor drives



Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
42
10
100
50
3.8
1.6
55 to +175
V
V
A


W


°C
ID
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C
(Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This N-Channel MOSFET FDD6030BL has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDD6030BL has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.




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