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FDD6035AL

MOSFET N-Ch PowerTrench Logic Level

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SeekIC No. : 00163511 Detail

FDD6035AL: MOSFET N-Ch PowerTrench Logic Level

FDD6035AL Data Sheet

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Part Number:
FDD6035AL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TO-252AA


Features:

· 46 A, 30 V RDS(ON) = 12 mW @ VGS = 10 V RDS(ON) = 14 mW @ VGS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)


Application

· DC/DC converter
· Motor Drives


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
46
12
100
56
3.3
1.5
55 to +175
V
V
A


W


°C
ID
 Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed		 (Note 3)
(Note 1a)
(Note 1a)
PD
 Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C		 (Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDD6035AL N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.




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