FDD6030L

MOSFET 30V N&P-Channel Power Trench

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FDD6030L Picture
SeekIC No. : 00159564 Detail

FDD6030L: MOSFET 30V N&P-Channel Power Trench

floor Price/Ceiling Price

Part Number:
FDD6030L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.0145 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.0145 Ohms


Features:

• 50 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V RDS(ON) = 0.0200 W @ VGS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• Low Crss.



Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
50
12
150
60
3.2
1.3
-55 to +150
V
V
A


W


°C
ID
Maximum Drain Current -Continuous (Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
PD
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
RJC
RJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.1
39
96
°C/W
°C/W
°C/W



Description

These FDD6030L N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices FDD6030L are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationFDD6030L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs14.5 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max1.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6030L
FDD6030L



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