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FDD6606

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00152030 Detail

FDD6606: MOSFET 30V N-Ch PowerTrench

FDD6606 Data Sheet

floor Price/Ceiling Price

US $ .59~1.15 / Piece | Get Latest Price
Part Number:
FDD6606
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.15
  • $.99
  • $.92
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.006 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.006 Ohms
Package / Case : TO-252AA


Features:

75 A, 30 V  R DS(ON) = 6 m@ VGS = 10 V 
   R DS(ON) = 8 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)


Application

DC/DC converter 
Motor Drives


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current Continuous (Note 3) 
                       Pulsed       (Note 1a) 		75 A
100
PD Power Dissipation for Single Operation (Note 1)
                                                            (Note 1a)
                                                            (Note 1b) 		71 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 °C



Description

This FDD6606 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC  converters using either synchronous or conventional  switching PWM controllers. It has been optimized for  low gate charge, low RDS( ON) and fast switching speed. 
 




Parameters:

Technical/Catalog InformationFDD6606
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs6 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 15V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs31nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6606
FDD6606



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