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FDD6635

MOSFET 35V N-Ch PowerTrench MOSFET

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SeekIC No. : 00152298 Detail

FDD6635: MOSFET 35V N-Ch PowerTrench MOSFET

FDD6635 Data Sheet

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US $ .33~.47 / Piece | Get Latest Price
Part Number:
FDD6635
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.47
  • $.41
  • $.38
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 35 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 0.01 Ohms
Drain-Source Breakdown Voltage : 35 V


Features:

  59 A, 35 V  RDS(ON) = 10 m @ VGS = 10 V 
                     RDS(ON) = 13 m @ VGS = 4.5 V  
Fast Switching 
RoHS compliant


Application

 Inverter 
Power Supplies


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 35 V
VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V
VGSS Gate-Source Voltage ±20 V
ID Continuous Drain Current @TC=25°C (Note 3)
                                         @TA=25°C (Note 1a)
                                         Pulsed         (Note 1a)		 59 A
15
100
PD Power Dissipation  @TC=25°C (Note 3)
                              @TA=25°C (Note 1a)
                              @TA=25°C (Note 1b)		 55 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD6635 N-Channel MOSFET has been produced using  Fairchild Semiconductor's proprietary PowerTrench  technology to deliver low Rdson and optimized Bvdss  capability to offer superior performance benefit in the  applications.




Parameters:

Technical/Catalog InformationFDD6635
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)35V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs10 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 20V
Power - Max1.6W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6635
FDD6635
FDD6635DKR ND
FDD6635DKRND
FDD6635DKR



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