FDD6670A

MOSFET 30V N-Ch PowerTrench Logic Level

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SeekIC No. : 00148003 Detail

FDD6670A: MOSFET 30V N-Ch PowerTrench Logic Level

floor Price/Ceiling Price

US $ .41~.68 / Piece | Get Latest Price
Part Number:
FDD6670A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.68
  • $.6
  • $.51
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 66 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 66 A
Resistance Drain-Source RDS (on) : 0.008 Ohms
Package / Case : TO-252AB


Features:

• 66 A, 30 V. RDS(on) = 0.008 Ω @ VGS = 10 V RDS(on) = 0.010 Ω @ VGS = 4.5 V.
• Low gate charge (35nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on).



Application

• DC/DC converter
• Motor drives



Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
66
15
100
70
3.2
1.3
-55 to +150
V
V
A


W


°C
ID
Maximum Drain Current -Continuous
TA = 25oC
(Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
PD
Maximum Power Dissipation TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
RJC
RJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
°C/W
°C/W
°C/W



Description

This FDD6670A N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDD6670A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1755pF @ 15V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs22nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names FDD6670A
FDD6670A
FDD6670ATR ND
FDD6670ATRND
FDD6670ATR



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