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FDD6670AS

MOSFET 30V N-Channel PowerTrench SyncFET

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SeekIC No. : 00163369 Detail

FDD6670AS: MOSFET 30V N-Channel PowerTrench SyncFET

FDD6670AS Data Sheet

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Part Number:
FDD6670AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-252AA
Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• 76 A, 30 V RDS(ON) max= 8.0 mΩ @ VGS = 10 V RDS(ON) max= 10.4 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (29nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Application

• DC/DC converter
• Low side notebook


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
76
100
70
3.2
1.3
55 to +150
V
V
ID
 Drain Current - Continuous
- Pulsed

(Note 3)
(Note 1a)
A
PD
 Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
W
TJ, TSTG
 Operating and Storage Temperature Range
°C



Description

The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDD6670AS
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C76A
Rds On (Max) @ Id, Vgs8 mOhm @ 13.8A, 10V
Input Capacitance (Ciss) @ Vds 1580pF @ 15V
Power - Max1.3W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6670AS
FDD6670AS
FDD6670ASCT ND
FDD6670ASCTND
FDD6670ASCT



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