FDD6676AS

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 4.7 m Ohms


Features:

• 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge (46nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability


Application

• DC/DC converter
• Low side notebook


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 90 100 70 3.1 1.3 55 to +150	V V
ID	Drain Current - Continuous - Pulsed	(Note 3) (Note 1a)		A
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)		W
TJ, TSTG	Operating and Storage Temperature Range			°C

Description

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology.

Parameters:

Technical/Catalog Information	FDD6676AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6676AS FDD6676AS