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FDD6685

MOSFET 30V P-Channel PowerTrench

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SeekIC No. : 00150360 Detail

FDD6685: MOSFET 30V P-Channel PowerTrench

FDD6685 Data Sheet

floor Price/Ceiling Price

US $ .39~.62 / Piece | Get Latest Price
Part Number:
FDD6685
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.62
  • $.49
  • $.45
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Continuous Drain Current : 40 A
Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

` 40 A, 30 V. RDS(ON) = 20 mW @ VGS = 10 V RDS(ON) = 30 mW @ VGS = 4.5 V
` Fast switching speed
` High performance trench technology for extremely low RDS(ON)
` High power and current handling capability
` Qualified to AEC Q101


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±25
40
11
100
52
3.8
1.6
55 to +175
V
V
ID
 Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed, PW £ 100µs
(Note 3)
(Note 1a)
(Note 1b)
A
PD
 Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
W
TJ, TSTG
 Operating and Storage Junction Temperature Range
°C



Description

This FDD6685 P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).




Parameters:

Technical/Catalog InformationFDD6685
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs20 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1715pF @ 15V
Power - Max1.6W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs24nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6685
FDD6685
FDD6685CT ND
FDD6685CTND
FDD6685CT



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