FDD6690A

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00159563 Detail

FDD6690A: MOSFET 30V N-Ch PowerTrench

floor Price/Ceiling Price

Part Number:
FDD6690A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 12 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-252
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 12 mOhms


Features:

· 46 A, 30 V RDS(ON) = 12 mW @ VGS = 10 V RDS(ON) = 14 mW @ VGS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)



Application

· DC/DC converter
· Motor Drives



Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
46
12
100
56
3.3
1.5
55 to +175
V
V
A


W


°C
ID
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C
(Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDD6690A N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDD6690A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs12 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max1.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs18nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6690A
FDD6690A
FDD6690ADKR ND
FDD6690ADKRND
FDD6690ADKR



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