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FDD6N50TF

MOSFET 500V N-Ch MOSFET

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SeekIC No. : 00160827 Detail

FDD6N50TF: MOSFET 500V N-Ch MOSFET

FDD6N50TF Data Sheet

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Part Number:
FDD6N50TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.9 Ohms


Parameters:

Technical/Catalog InformationFDD6N50TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs900 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 940pF @ 25V
Power - Max89W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16.6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6N50TF
FDD6N50TF
FDD6N50TFTR ND
FDD6N50TFTRND
FDD6N50TFTR



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